Nanoelectronic Devices Computational Group

• 3D quantum transport device simulations using Non-Equilibrium Green's Function (NEGF) technique including non-dissipative processes (eletron-phonon scattering)
• Parallel 3D finite element ensemble Monte Carlo (MC) device simulations including 2D Schrödinger equation quantum corrections
• 2D finite element ensemble Monte Carlo (MC) device simulations including quantum corrections
• Parallel 3D finite element drift-diffusion (DD) device simulations including quantum corrections (density gradient)

• EPSRC Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors (PI: K. Kalna, ended 2015)
• EPSRC Career Acceleration Fellowship Quantum Simulations of Future Solid State Transistors (Fellow: A. Martinez, ended 2016)
• FP7 Marie-Curie Fellowship 3D modelling of the performance and variability of high electron mobility transistors for future digital applications (PERSEUS) (Fellow: Natalia Seoane)
• EPSRC Advanced Research Fellowship Modelling of Carrier Transport in Ultra Thin Body Transistors (Fellow: K. Kalna, ended August 2012)
• Royal Society International Joint Project Finite Element 3D Monte Carlo Device Simulator for Multigate Transistors (PI: K. Kalna, ended February 2012)

• Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs Natalia Seoane, Julian G. Fernandez, Karol Kalna, Enrique Comesana, Antonio Garcia-Loureiro. Journal article1/10/2021IEEE Electron Device Letters42(10)1416-141910.1109/led.2021.3109586
• Martinez Muniz, A. & Barker, J. (2020). Quantum Transport in a Silicon Nanowire FET Transistor: Hot Electrons and Local Power Dissipation. Materials, 13(15), 3326 https://doi.org/10.3390/ma13153326, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa55115

Past Publications