Dr Antonio Martinez Muniz
Associate Professor
Telephone: (01792) 295421
Room: Academic Office - B203
Engineering East
Bay Campus

Specialist Subjects:

Quantum and Semi-Classical Carrier Transport in Semiconductors
Non-Equilibrium Green’s Function (NEGF) based Device Simulation of Nano-Transistors and MOSFETs. Monte Carlo Simulation of Low and High Field Material Properties such as Mobility and Impact Ionization Coefficients


The deployment of phenomenological or renormalized physical models

Combined with powerful computational frameworks, will allow for the prediction and understanding of behavior in relatively small nanostructures. There is also a substantial injection of charge into the structures so electrostatic self-consistency cannot be ignored.

Developed 2D and 3D ballistic device simulators based on the NEGF formalism for nanotransistors

Study of variability induced by surface roughness and discrete random dopants affecting Silicon nanowire, double gate and junction-less transistors

Study on the impact of phonon scattering on the performance of nanowire transistors as a function of the cross section

Study of power dissipation and hot electron relaxation in nanowire transistors and the impact of exchange-correlation correction combined with dissipative physics in the current voltage characteristic of silicon nanowire transistors

Areas of Expertise

  • Computational Nanoelectronics
  • Quantum Transport Simulations of Nanotransistors


  1. & Image charge models for accurate construction of the electrostatic self-energy of 3D layered nanostructure devices. Journal of Physics: Condensed Matter 30(13), 134002
  2. & Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective. Journal of Computational Electronics 15(4), 1130-1147.
  3. & Electron transport through 8-oxoG: NEGF/DFT study. Journal of Computational Electronics
  4. & Study of Local Power Dissipation in Ultrascaled Silicon Nanowire FETs. IEEE Electron Device Letters 36(1), 2-4.
  5. & Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism. Journal of Applied Physics 117(16), 164501

See more...


  • EG-168 Engineering Professional Development

    To develop fundamental engineering communication skills using standard ICT tools. These skills will be taught and developed in the context of the Swansea Tidal Lagoon. This module also introduces ethics in engineering and continuing professional development.

  • EG-225 Structural Mechanics IIb

    This module continues from EG-221 and introduces some advanced topics in Structural Analysis; matrix stiffness methods for trusses and frames, moment distribution method for continuous beams and basic theory on influence lines for both statically determinate and indeterminate structures. Furthermore, experimental testing of various structures and familiarization with a commercial structural analysis package will also be carried out.

  • EGA108 Functional and Smart Materials

    This module covers the underlying scientific principles behind the physical properties of functional and smart materials. It provides the basis for electrical conductivity, semiconductivity, superconductivity as well as optical, magnetic and thermal properties. The ways in which these properties can be utilised in a wide range of devices is explored. Module Aims: to introduce the scientific principles behind the physical properties of functional and smart materials and to expolre the manufacture of functional devices.

  • EGA119 Engineering Skills for Aerospace Engineers

    The module will introduce students to a range of professional skills that are part of engineering practice such as ethics, sustainability, health and safety and employability. Technical communication and report writing will also be introduced in the module in the context of the Bloodhound SSC. To allow students to practice these skills a statistical based analysis exercise using Excel will be undertaken. Excel, uncertainty and statistical skills will also be taught as part of the module to support the analysis exercise.

  • EGA206 Aerospace Structural Mechanics and Materials

    Building on Strength of Materials and Structural Mechanics 2(a), this module introduces the students to the stiffness method for structural analysis, followed by lectures covering stress concentration, fatigue, cracking and creeping of materials and how to design for these in the aerospace and automotive industry.


  • Modelling of Molecular Transport using DFT and NEGF. (current)

    Student name:
    Other supervisor: Dr Karol Kalna
  • Wide Bandgap Material Discovery (current)

    Student name:
    Other supervisor: Dr Karol Kalna
  • Dynamic Characterisation and Modelling of RF GaN HEMTs (current)

    Student name:
    Other supervisor: Dr Karol Kalna
  • SiC power diode design«br /»«br /»«br /»«br /»«br /»«br /»«br /» (current)

    Student name:
    Other supervisor: Dr Karol Kalna
  • ''''Non-Equilibrium Green''''s Function simulations of phonon scattering and self-heating in III-V Nanowire field effect transistors'''' (awarded 2017)

    Student name:
    Other supervisor: Dr Karol Kalna

Career History

Start Date End Date Position Held Location
2010 2015 EPSRC Career Acceleration Fellow & Senior Lecturer Swansea University
2004 2010 Lecturer Department of Electrical and Electronics Engineering, Glasgow University

Academic History

Date Qualification Location
2003 PhD Royal Institute of Technology, Stockholm, Sweden
1997 MSc Physics University of Umea, Sweden
1987 MSc Physics University of Havana, Cuba

Key Grants and Projects

  • Career Acceleration Fellowship Grant through which a Quantum Device simulator with atomic resolution, is being developed. 2010

    This will significantly strengthen simulations and modelling research in semiconductor devices at the College of Engineering., £712,369