Quantum and Semi-Classical Carrier Transport in Semiconductors
Non-Equilibrium Green’s Function (NEGF) based Device Simulation of Nano-Transistors and MOSFETs. Monte Carlo Simulation of Low and High Field Material Properties such as Mobility and Impact Ionization Coefficients
The deployment of phenomenological or renormalized physical models
Combined with powerful computational frameworks, will allow for the prediction and understanding of behavior in relatively small nanostructures. There is also a substantial injection of charge into the structures so electrostatic self-consistency cannot be ignored.
Developed 2D and 3D ballistic device simulators based on the NEGF formalism for nanotransistors
Study of variability induced by surface roughness and discrete random dopants affecting Silicon nanowire, double gate and junction-less transistors
Study on the impact of phonon scattering on the performance of nanowire transistors as a function of the cross section
Study of power dissipation and hot electron relaxation in nanowire transistors and the impact of exchange-correlation correction combined with dissipative physics in the current voltage characteristic of silicon nanowire transistors