About
Dr Yuzheng Guo is a Senior Lecturer in the Department of Engineering at Swansea University.
Dr Yuzheng Guo
Senior Lecturer,
General Engineering
Office - 422
Fourth Floor
Engineering North
Bay Campus
Fourth Floor
Engineering North
Bay Campus
Research Links
Publications
Research Highlights
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Lu, H., Guo, Y., & Robertson, J. (2019). Electronic structure of metallic and insulating phases of vanadium dioxide and its oxide alloys. Physical Review Materials, 3(9)
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Chen, J., Zhang, Z., Guo, Y., & Robertson, J. (2019). Schottky barrier height at metal/ZnO interface: A first-principles study. Microelectronic Engineering, 216, 111056
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Lu, H., Guo, Y., Li, H., & Robertson, J. (2019). Modeling of surface gap state passivation and Fermi level de-pinning in solar cells. Applied Physics Letters, 114(22), 222106
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Zhang, Z., Guo, Y., & Robertson, J. (2019). Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study. Microelectronic Engineering, 111039
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Zhang, Z., Guo, Y., & Robertson, J. (2019). Chemical bonding and band alignment at X2O3/GaN (X = Al, Sc) interfaces. Applied Physics Letters, 114(16), 161601
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Guo, Y., Li, H., Clark, S., Robertson, J., & Guo, Y. (2019). Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators. The Journal of Physical Chemistry C, 123(9), 5562-5570.
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Lu, H., Guo, Y., Martin, J., Kraft, M., & Robertson, J. (2019). Atomic structure and electronic structure of disordered graphitic carbon nitride. Carbon, 147, 483-489.
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Li, H., Guo, Y., & Robertson, J. (2018). Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO. Physical Review Materials, 2(7)
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Zhang, Y., Huang, R., Li, H., Hou, D., Lin, Z., Song, J., Guo, Y., Lin, H., Song, C., Lin, Z., & Robertson, J. (2018). Germanium substitution endowing Cr 3+ -doped zinc aluminate phosphors with bright and super-long near-infrared persistent luminescence. Acta Materialia, 155, 214-221.
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Cui, M., Guo, Y., Zhu, Y., Liu, H., Wen, W., Wu, J., Cheng, L., Zeng, Q., & Xie, L. (2018). Graphene–Organic Two-Dimensional Charge-Transfer Complexes: Intermolecular Electronic Transitions and Broadband Near-Infrared Photoresponse. The Journal of Physical Chemistry C, 122(13), 7551-7556.
All Research
Journal Articles
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Chen, J., Zhang, Z., Guo, Y., & Robertson, J. (2022). Electronic properties of CaF2 bulk and interfaces. Journal of Applied Physics, 131(21), 215302
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Zhao, S., Li, B., Guo, Y., & Li, H. (2022). Ferroelectric-HfO2/oxide interfaces, oxygen distribution effects, and implications for device performance. Applied Physics Letters, 120(1), 012904-012904.
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Guo, Y., Zou, X., Hu, Y., Yang, Y., Wang, X., He, Y., Kong, R., Guo, Y., Li, G., Zhang, W., Wu, S., & Li, H. (2021). A Marr's Three‐Level Analytical Framework for Neuromorphic Electronic Systems. Advanced Intelligent Systems, 3(11), 2100054-2100054.
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Yang, Y., Xu, M., Jia, S., Wang, B., Xu, L., Wang, X., Liu, H., Liu, Y., Guo, Y., Wang, L., Duan, S., Liu, K., Zhu, M., Pei, J., Duan, W., Liu, D., & Li, H. (2021). A new opportunity for the emerging tellurium semiconductor: making resistive switching devices. Nature Communications, 12(1), 6081
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Lu, H., Guo, Y., & Robertson, J. (2021). Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions. ACS Applied Materials & Interfaces, 13(39), 47226-47235.
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Guo, Y., Zhang, Z., & Robertson, J. (2021). High-Throughput Electronic Structures and Ferroelectric Interfaces of HfO2 by GGA+U(d,p) Calculations. physica status solidi (RRL) – Rapid Research Letters, 15(10), 2100295
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Chen, J., Zhang, Z., Guo, Y., & Robertson, J. (2021). Schottky barrier heights of defect-free metal/ZnO, CdO, MgO, and SrO interfaces. Journal of Applied Physics, 129(17), 175304
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Zhang, Z., Guo, Y., & Robertson, J. (2020). Role of the third metal oxide in In–Ga–Zn–O4 amorphous oxide semiconductors: Alternatives to gallium. Journal of Applied Physics, 128(21), 215704
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Zhang, Z., Guo, Y., & Robertson, J. (2020). Origin of Weaker Fermi Level Pinning and Localized Interface States at Metal Silicide Schottky Barriers. The Journal of Physical Chemistry C, 124(36), 19698-19703.
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Zhang, Z., Guo, Y., & Robertson, J. (2020). Termination-dependence of Fermi level pinning at rare-earth arsenide/GaAs interfaces. Applied Physics Letters, 116(25), 251602
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Zhang, Z., Guo, Y., & Robertson, J. (2020). Phase dependence of Schottky barrier heights for Ge–Sb–Te and related phase-change materials. Journal of Applied Physics, 127(15), 155301
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Liu, Y., Wang, T., Robertson, J., Luo, J., Guo, Y., & Liu, D. (2020). Band Structure, Band Offsets, and Intrinsic Defect Properties of Few-Layer Arsenic and Antimony. The Journal of Physical Chemistry C, 124(13), 7441-7448.
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Zhang, Z., Guo, Y., Lu, H., Clark, S., & Robertson, J. (2020). Hybrid band offset calculation for heterojunction interfaces between disparate semiconductors. Applied Physics Letters, 116(13), 131602
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Guo, H., Zhang, Z., Guo, Y., Gao, Z., Zheng, R., & Wu, H. (2020). Impact of the interface vacancy on Schottky barrier height for Au/AlN polar interfaces. Applied Surface Science, 505, 144650
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Lu, H., Guo, Y., & Robertson, J. (2019). Electronic structure of metallic and insulating phases of vanadium dioxide and its oxide alloys. Physical Review Materials, 3(9)
-
Lu, H., Guo, Y., Li, H., & Robertson, J. (2019). Modeling of surface gap state passivation and Fermi level de-pinning in solar cells. Applied Physics Letters, 114(22), 222106
-
Zhang, Z., Guo, Y., & Robertson, J. (2019). Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study. Microelectronic Engineering, 111039
-
Zhang, Z., Guo, Y., & Robertson, J. (2019). Chemical bonding and band alignment at X2O3/GaN (X = Al, Sc) interfaces. Applied Physics Letters, 114(16), 161601
-
Guo, Y., Li, H., Clark, S., Robertson, J., & Guo, Y. (2019). Band Offset Models of Three-Dimensionally Bonded Semiconductors and Insulators. The Journal of Physical Chemistry C, 123(9), 5562-5570.
-
Lu, H., Guo, Y., Martin, J., Kraft, M., & Robertson, J. (2019). Atomic structure and electronic structure of disordered graphitic carbon nitride. Carbon, 147, 483-489.
-
Chen, J., Zhang, Z., Guo, Y., & Robertson, J. (2019). Schottky barrier height at metal/ZnO interface: A first-principles study. Microelectronic Engineering, 216, 111056
-
Li, H., Guo, Y., & Robertson, J. (2018). Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO. Physical Review Materials, 2(7)
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Lu, H., Guo, Y., & Robertson, J. (2018). Band edge states, intrinsic defects, and dopants in monolayer HfS2 and SnS2. Applied Physics Letters, 112(6), 062105
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Zhang, Y., Huang, R., Li, H., Hou, D., Lin, Z., Song, J., Guo, Y., Lin, H., Song, C., Lin, Z., & Robertson, J. (2018). Germanium substitution endowing Cr 3+ -doped zinc aluminate phosphors with bright and super-long near-infrared persistent luminescence. Acta Materialia, 155, 214-221.
-
Cui, M., Guo, Y., Zhu, Y., Liu, H., Wen, W., Wu, J., Cheng, L., Zeng, Q., & Xie, L. (2018). Graphene–Organic Two-Dimensional Charge-Transfer Complexes: Intermolecular Electronic Transitions and Broadband Near-Infrared Photoresponse. The Journal of Physical Chemistry C, 122(13), 7551-7556.
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Wen, W., Lin, J., Suenaga, K., Guo, Y., Zhu, Y., Hsu, H., & Xie, L. (2017). Preferential S/Se occupation in an anisotropic ReS2(1−x)Se2x monolayer alloy. Nanoscale
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Sedghi, N., Li, H., Brunell, I., Dawson, K., Guo, Y., Potter, R., Gibbon, J., Dhanak, V., Zhang, W., Zhang, J., Hall, S., Robertson, J., Chalker, P., & Guo, Y. (2017). Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping. Applied Physics Letters, 111(9), 092904
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Lu, H., Guo, Y., & Robertson, J. (2017). Charge transfer doping of graphene without degrading carrier mobility. Journal of Applied Physics, 121(22), 224304
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Hou, S., Guo, Y., Tang, Y., & Quan, Q. (2017). Synthesis and Stabilization of Colloidal Perovskite Nanocrystals by Multidentate Polymer Micelles. ACS Applied Materials & Interfaces, 9(22), 18417-18422.
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Sedghi, N., Li, H., Brunell, I., Dawson, K., Potter, R., Guo, Y., Gibbon, J., Dhanak, V., Zhang, W., Zhang, J., Robertson, J., Hall, S., Chalker, P., & Guo, Y. (2017). The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM. Applied Physics Letters, 110(10), 102902
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Guo, Y. & Robertson, J. (2017). Band offsets and metal contacts in monolayer black phosphorus. Microelectronic Engineering, 178, 108-111.
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Li, H., Guo, Y., & Robertson, J. (2017). Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors. Scientific Reports, 7(1)
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Li, H., Guo, Y., & Robertson, J. (2017). Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge. Scientific Reports, 7(1)
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Park, J., Sanne, A., Guo, Y., Amani, M., Zhang, K., Movva, H., Robinson, J., Javey, A., Robertson, J., Banerjee, S., & Kummel, A. (2017). Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface. Science Advances, 3(10), e1701661
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Liang, F., Guo, Y., Hou, S., & Quan, Q. (2017). Photonic-plasmonic hybrid single-molecule nanosensor measures the effect of fluorescent labels on DNA-protein dynamics. Science Advances, 3(5), e1602991
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Fang, L., Liu, D., Guo, Y., Liao, Z., Luo, J., & Wen, S. (2017). Thickness dependent friction on few-layer MoS2, WS2, and WSe2. Nanotechnology, 28(24), 245703
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Esconjauregui, S., D’Arsié, L., Guo, Y., Yang, J., Sugime, H., Caneva, S., Cepek, C., & Robertson, J. (2015). Efficient Transfer Doping of Carbon Nanotube Forests by MoO3. ACS Nano, 9(10), 10422-10430.
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Guo, Y., Liu, D., & Robertson, J. (2015). 3D Behavior of Schottky Barriers of 2D Transition-Metal Dichalcogenides. ACS Applied Materials & Interfaces, 7(46), 25709-25715.
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Guo, Y. & Robertson, J. (2015). Vacancy and Doping States in Monolayer and bulk Black Phosphorus. Scientific Reports, 5, 14165
Career History
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Visiting Scholar, Harvard University
2015 - 2016
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Research Associate, Cambridge University
2013 - 2015
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PhD Engineering, Cambridge University
2009 - 2013
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MSc Materials Science and Engineering, Georgia Institute of Technology
2008 - 2009
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BSc Physics, Peking University
2004 - 2007