I am an Associate Professor with a background in semiconductor electronic materials (silicon, silicon carbide, gallium oxide and gallium nitride) for power electronics. Funded projects from Horizon 2020, Innovate UK, and directly from industry have been acquired with a total research income to date of over £1M.  Experienced at publishing in leading journals and conferences (over 80 journal publications). A high degree of industrial collaboration has been acquired through industrially-led and sponsored research programmes.

My belief in research-led teaching (including in-school outreach activity) has led me to bring to the lecture theatre an innovative approach through utilising optimal visualisation techniques. Having completed a recognised lecturing qualification, I am a fellow of the Higher Education Academy.

Research Interests

  • Silicon Carbide (4H- and 3C-SiC) Power Semiconductor Device Fabrication and Characterisation*
  • Reliability of Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) 
  • Gallium Oxide Power Electronic Devices
  • Power electronic devices and applications

*Full research profile including publication list: Google Scholar Account


  1. & On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes. IEEE Transactions on Industry Applications, 1-1.
  2. et. al. 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE). Materials Science Forum 924, 913-918.
  3. & P-type β-gallium oxide: A new perspective for power and optoelectronic devices. Materials Today Physics 3, 118-126.
  4. & Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating. IEEE Journal of the Electron Devices Society 5(4), 256-261.
  5. & High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs. IEEE Transactions on Power Electronics 32(10), 7967-7979.


  • EG-319 IC Design

    To provide an overview of the BiCMOS and CMOS technologies and the concepts of designing analog and digital integrated circuits in the context of CMOS technology.



    Student name:
    Other supervisor: Prof Owen Guy

PhD Vacancy

Gallium Oxide Semiconductor Devices for Power Electronics

This project will work alongside a consortium of leading industrial and academic partners, which brings together a number of world leaders in power semiconductors and energy conversion to develop solutions for automotive, aerospace, industrial and grid-level power electronics. The purpose is to improve the UKs energy infrastructure as we move into a low carbon economy. A paradigm shift in technology will be required in order to cope effectively with an ever-increasing amount of renewable energy being brought online. It is envisaged that other forms of renewable energy e.g. tidal, solar could also play a role alongside traditional coal fired power stations and nuclear energy generation. Revolutionary changes to power conversion is indispensable if these carbon emissions targets are to be met. The objective is to enable a step change in power conversion, transmission and distribution through power electronics based on new materials. At the heart of such systems are power semiconductor devices.

The advantages of wide bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN) for power electronic applications are well documented. Gallium Oxide (Ga2O3) is an emerging oxide semiconductor that has recently been identified as a promising candidate for power electronics and photovoltaics. There are very few reports on this exciting new material. This project is aimed at understanding the fundamental performance limit of Ga2O3 power devices through finite element modelling (electrical and thermal) and device fabrication aimed at both power electronics and photovoltaics. A self-motivated individual who will be based between the College of Engineering will conduct research into the latest gallium oxide power electronic devices. The research work will be undertaken in a state of the art micro-fabrication power semiconductor device cleanroom.