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Dr Antonio Martinez Muniz

Associate Professor, Engineering

Telephone number

+44 (0) 1792 295421

Research Links

Academic Office - B203
Second Floor
Engineering East
Bay Campus
Available For Postgraduate Supervision

About

Specialist Subjects:

Quantum and Semi-Classical Carrier Transport in Semiconductors
Non-Equilibrium Green’s Function (NEGF) based Device Simulation of Nano-Transistors and MOSFETs. Monte Carlo Simulation of Low and High Field Material Properties such as Mobility and Impact Ionization Coefficients

Areas Of Expertise

  • Computational Nanoelectronics
  • Quantum Transport Simulations of Nanotransistors

Career Highlights

Research

The deployment of phenomenological or renormalized physical models

Combined with powerful computational frameworks, will allow for the prediction and understanding of behavior in relatively small nanostructures. There is also a substantial injection of charge into the structures so electrostatic self-consistency cannot be ignored.

Developed 2D and 3D ballistic device simulators based on the NEGF formalism for nanotransistors

Study of variability induced by surface roughness and discrete random dopants affecting Silicon nanowire, double gate and junction-less transistors

Study on the impact of phonon scattering on the performance of nanowire transistors as a function of the cross section

Study of power dissipation and hot electron relaxation in nanowire transistors and the impact of exchange-correlation correction combined with dissipative physics in the current voltage characteristic of silicon nanowire transistors