Publications

Journal Articles

  1. Kalna, K. Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs IEEE Access 6
  2. Seoane, N., Nagy, D., Indalecio, G., Espiñeira, G., Kalna, K., García-Loureiro, A. A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs Materials 12 15 2391
  3. Islam, A., Kalna, K., Kalna, K. Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects IOP Conference Series: Materials Science and Engineering 504 012021
  4. Espineira, G., Nagy, D., Indalecio, G., Garcia-Loureiro, A., Kalna, K., Seoane, N., Kalna, K. Impact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET IEEE Electron Device Letters 40 4 510 513
  5. Nagy, D., Indalecio, G., Garcia-Loureiro, A., Espineira, G., Elmessary, M., Kalna, K., Seoane, N. Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs IEEE Access 7 12790 12797
  6. Adenekan, O., Holland, P., Kalna, K. Scaling and optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub–50 V applications Microelectronics Reliability 99 213 221
  7. Alqaysi, M., Martinez, A., Ahmeda, K., Ubochi, B., Kalna, K., Martinez Muniz, A. Impact of interface traps/defects and self-heating on the degradation of performance of a 4H-SiC VDMOSFET IET Power Electronics 12 11 2731 2740
  8. Forster, S., Chaussende, D., Kalna, K. Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al4SiC4 ACS Applied Energy Materials 2 1 715 720
  9. Indalecio, G., Garcia-Loureiro, A., Elmessary, M., Kalna, K., Seoane, N. Spatial Sensitivity of Silicon GAA Nanowire FETs under Line Edge Roughness Variations IEEE Journal of the Electron Devices Society 1 1
  10. Nagy, D., Indalecio, G., Garcia-Loureiro, A., Elmessary, M., Kalna, K., Seoane, N. FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability IEEE Journal of the Electron Devices Society 6 332 340
  11. Mohamed, A., Oxland, R., Aldegunde, M., Hepplestone, S., Sushko, P., Kalna, K., Kalna, K. Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS Solid-State Electronics
  12. Seoane, N., Indalecio, G., Nagy, D., Kalna, K., Garcia-Loureiro, A. Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability IEEE Transactions on Electron Devices 65 2 456 462
  13. Adenekan, O., Holland, P., Kalna, K. Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications Microelectronics Journal 81 94 100
  14. Duffy, S., Benbakhti, B., Kalna, K., Boucherta, M., Zhang, W., Bourzgui, N., Soltani, A. Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs IEEE Access 6 42721 42728
  15. Ahmeda, K., Ubochi, B., Benbakhti, B., Duffy, S., Soltani, A., Zhang, W., Kalna, K., Kalna, K. Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures IEEE Access 1 1
  16. Ubochi, B., Faramehr, S., Ahmeda, K., Igić, P., Kalna, K. Operational frequency degradation induced trapping in scaled GaN HEMTs Microelectronics Reliability 71 35 40
  17. Thorpe, B., Kalna, K., Langbein, F., Schirmer, S., Kalna, K., Shermer, S. Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor Journal of Applied Physics 122 22 223903
  18. Duffy, S., Benbakhti, B., Mattalah, M., Zhang, W., Bouchilaoun, M., Boucherta, M., Kalna, K., Bourzgui, N., Maher, H., Soltani, A., Kalna, K. Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate ECS Journal of Solid State Science and Technology 6 11 S3040 S3043
  19. Ubochi, B., Ahmeda, K., Kalna, K. Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs ECS Journal of Solid State Science and Technology 6 11 S3005 S3009
  20. Kalna, K. Fluctuation Sensitivity Map: A Novel Technique to Characterise and Predict Device Behaviour Under Metal Grain Work-Function Variability Effects IEEE Transactions on Electron Devices 64 4 1695 1701
  21. Elmessary, M., Nagy, D., Aldegunde, M., Seoane, N., Indalecio, G., Lindberg, J., Dettmer, W., Perić, D., García-Loureiro, A., Kalna, K., Peric, D. Scaling/LER Study of Si GAA Nanowire FET using 3D Finite Element Monte Carlo Simulations Solid-State Electronics 128 17 24
  22. Kryvchenkova, O., Abdullah, I., Macdonald, J., Elliott, M., Anthopoulos, T., Lin, Y., Igić, P., Kalna, K., Cobley, R., Igic, P. Nondestructive Method for Mapping Metal Contact Diffusion in In2O3 Thin-Film Transistors ACS Applied Materials & Interfaces 8 38 25631 25636
  23. Benbakhti, B., Chan, K., Soltani, A., Kalna, K. Device and Circuit Performance of the Future Hybrid III–V and Ge-Based CMOS Technology IEEE Transactions on Electron Devices 63 10 3893 3899
  24. Indalecio, G., Garcia-Loureiro, A., Seoane Iglesias, N., Kalna, K. Study of Metal-Gate Work-Function Variation Using Voronoi Cells: Comparison of Rayleigh and Gamma Distributions IEEE Transactions on Electron Devices 63 6 2625 2628
  25. Seoane, N., Aldegunde, M., Nagy, D., Elmessary, M., Indalecio, G., García-Loureiro, A., Kalna, K., Kalna, K. Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes Semiconductor Science and Technology 31 7 075005
  26. Seoane, N., Indalecio, G., Aldegunde, M., Nagy, D., Elmessary, M., Garcia-Loureiro, A., Kalna, K. Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs IEEE Transactions on Electron Devices 63 3 1209 1216
  27. Elmessary, M., Nagy, D., Aldegunde, M., Lindberg, J., Dettmer, W., Peric, D., Garcia-Loureiro, A., Kalna, K. Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors IEEE Transactions on Electron Devices 63 3 933 939
  28. Nagy, D., Elmessary, M., Aldegunde, M., Valin, R., Martinez, A., Lindberg, J., Dettmer, W., Peric, D., Garcia-Loureiro, A., Kalna, K., Martinez Muniz, A. 3-D Finite Element Monte Carlo Simulations of Scaled Si SOI FinFET With Different Cross Sections IEEE Transactions on Nanotechnology 14 1 93 100
  29. Barnett, C., Kryvchenkova, O., Wilson, L., Maffeis, T., Kalna, K., Cobley, R., Kalna, K. The role of probe oxide in local surface conductivity measurements Journal of Applied Physics 117 17 174306
  30. Indalecio, G., Seoane, N., Aldegunde, M., Kalna, K., García-Loureiro, A., Kalna, K. Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold Journal of Low Power Electronics 11 2 256 262
  31. Kryvchenkova, O., Cobley, R., Kalna, K., Cobley, R., Kalna, K. The Current Crowding Effect in ZnO Nanowires with a Metal Contact Materials Today: Proceedings 2 1 309 314
  32. Lord, A., Maffeis, T., Kryvchenkova, O., Cobley, R., Kalna, K., Kepaptsoglou, D., Ramasse, Q., Walton, A., Ward, M., Köble, J., Wilks, S. Controlling the Electrical Transport Properties of Nanocontacts to Nanowires Nano Letters 15 7 4248 4254
  33. Barnett, C., Kryvchenkova, O., Wilson, L., Maffeis, T., Kalna, K., Cobley, R., Maffeis, T., Cobley, R., Kalna, K. The role of probe oxide in local surface conductivity measurements Journal of Applied Physics 117 17 174306
  34. Aldegunde, M., Kalna, K., Kalna, K. Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes Computer Physics Communications 189 31 36
  35. Seoane, N., Indalecio, G., Comesana, E., Aldegunde, M., Garcia-Loureiro, A., Kalna, K. Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET IEEE Transactions on Electron Devices 61 2 466 472
  36. Indalecio, G., Aldegunde, M., Seoane, N., Kalna, K., García-Loureiro, A., Kalna, K. Statistical study of the influence of LER and MGG in SOI MOSFET Semiconductor Science and Technology 29 4 045005
  37. Aldegunde, M., Hepplestone, S., Sushko, P., Kalna, K., Kalna, K. Multi-scale simulations of a Mo/n+–GaAs Schottky contact for nano-scale III–V MOSFETs Semiconductor Science and Technology 29 5 054003
  38. Faramehr, S., Kalna, K., Igić, P., Igic, P. Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application Semiconductor Science and Technology 29 2 025007
  39. Faramehr, S., Kalna, K., Igić, P., Igic, P. Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications Semiconductor Science and Technology 29 11 115020
  40. Lindberg, J., Aldegunde, M., Nagy, D., Dettmer, W., Kalna, K., Garcia-Loureiro, A., Peric, D. Quantum Corrections Based on the 2-D Schroedinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs IEEE Transactions on Electron Devices 61 2 423 429
  41. Aldegunde, M., Hepplestone, S., Sushko, P., Kalna, K., Kalna, K. Multi-scale simulations of a Mo/n+–GaAs Schottky contact for nano-scale III–V MOSFETs Semiconductor Science and Technology 29 5 054003
  42. Kryvchenkova, O., Cobley, R., Kalna, K., Cobley, R., Kalna, K. Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors Applied Surface Science 295 173 179
  43. Seoane, N., Indalecio, G., Comesana, E., Garcia-Loureiro, A., Aldegunde, M., Kalna, K., Kalna, K. Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET IEEE Electron Device Letters 34 2 205 207
  44. Aldegunde, M., Garcia-Loureiro, A., Kalna, K. 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors IEEE Transactions on Electron Devices 60 5 1561 1567
  45. Benbakhti, B., Martinez, A., Kalna, K., Hellings, G., Eneman, G., Meyer, K., Meuris, M. Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET IEEE Transactions on Nanotechnology 11 4 808 817
  46. Kalna, K. 3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In0.75Ga0.25As MOSFETs Solid-State Electronics 69 43
  47. Kalna, K. Design and analysis of the In0.53Ga0.47As implant-free quantum-well device structure Microelectronic Engineering
  48. Kalna, K. Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach Solid-State Electronics
  49. Kalna, K. Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi–Dirac statistics Semiconductor Science and Technology
  50. Kalna, K., Martinez Muniz, A. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
  51. Kalna, K. Monte Carlo Study of Ultimate Channel Scaling in Si and In0.3Ga0.7As Bulk MOSFETs IEEE Transactions on Nanotechnology 10 6
  52. Kalna, K. Electron velocity decline in Si nanoscales MOSFETs with the shortening of gate length Journal of Physics: Conference Series
  53. Kalna, K. Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures Microelectronics Reliability
  54. Kalna, K. Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes Computer Physics Communications
  55. Kalna, K. Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs Microelectronic Engineering
  56. Kalna, K. Impact of intrinsic parameter fluctuations on the performance of In0.75Ga0.25As implant free MOSFETs Semiconductor Science and Technology
  57. Kalna, K. Effect of interface state trap density on the performance of scaled surface channel In0.3Ga0.7As MOSFETs Journal of Physics: Conference Series
  58. Kalna, K. The characterization of the hole transport in Sb based strained quantum wells Journal of Physics: Conference Series
  59. Kalna, K., Martinez Muniz, A. Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study IEEE Transactions on Nanotechnology
  60. Kalna, K. Monte Carlo Simulations of In0.75Ga0.25As MOSFETs at 0.5 V Supply Voltage for High-Performance CMOS International Journal of High Speed Electronics and Systems
  61. Kalna, K. Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices IEEE Transactions on Electron Devices
  62. Kalna, K., Seoane, N., Garcia-Loureiro, A., Thayne, I., Asenov, A., Kalna, K. Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs IEEE Transactions on Electron Devices 55 9 2297 2306
  63. Thayne, I., Hill, R., Moran, D., Kalna, K., Asenov, A., Passlack, M. Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm' IEEE Electron Device Letters 29 10 1085
  64. Kalna, K., Martinez Muniz, A. NEGF simulations of the effect of strain on scaled double gate nanoMOSFETs Journal of Computational Electronics
  65. Seoane, N., Aldegunde, M., García-Loureiro, A., Valin, R., Kalna, K. Random dopant related variability in the 30 nm gate length In0.75Ga0.25As implant free MOSFET Journal of Computational Electronics
  66. Kalna, K., Martinez Muniz, A. Tetrahedral elements in self-consistent parallel 3D Monte Carlo simulations of MOSFETs Journal of Computational Electronics
  67. Kalna, K. Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors Physical Review E 77 5

Conference Contributions

  1. Elmessary, M., Nagy, D., Aldegunde, M., Seoane, N., Indalecio, G., Lindberg, J., Dettmer, W., Peric, D., Garcia-Loureiro, A., Kalna, K. Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) 52 55
  2. Indalecio, G., Garcia-Loureiro, A., Aldegunde, M., Kalna, K., Kalna, K. Study of statistical variability in nanoscale transistors introduced by LER, RDF and MGG 95 98
  3. Kalna, K., Ayubi-Moak, J., Kalna, K. Monte Carlo simulations of inverse channel versus implant free In0.3Ga0.7As MOSFETs 1 4
  4. Faramehr, S., Igic, P., Kalna, K., Kalna, K. TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT 11 14
  5. Martinez, A., Aldegunde, M., Kalna, K., Barker, J., Kalna, K. Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors 1 4
  6. Martinez, A., Kalna, K., Aldegunde, M. Impact of phonon scattering in a Si GAA nanowire FET with a single donor in the channel 1348 1351
  7. Islam, A., Kalna, K. Monte Carlo simulations of channel scaling to ultimate limit in Si and In0.3Ga0.7As bulk MOSFETs 321 324
  8. Benbakhti, B., Towie, E., Kalna, K., Hellings, G., Eneman, G., Meyer, K., Meuris, M., Asenov, A., Kalna, K. Monte Carlo analysis of In0.53Ga0.47as Implant-Free Quantum-Well device performance 1 2
  9. Aldegunde, M., Garcia-Loureiro, A., Seoane, N., Asenov, A., Kalna, K. Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs CDE 2009. Spanish Conference on Electron Devices, 11-13 Feb. 2009 211 214
  10. Aldegunde, M., Garcia-Loureiro, A., Martinez, A., Kalna, K. 3D Monte Carlo simulation of Tri-Gate MOSFETs using tetrahedral finite elements 153 156
  11. Kalna, K., Asenov, A., Ayubi-Moak, J., Craven, A., Droopad, R., Hill, R., Holland, M., Li, X., Long, A., Longo, P., MacIntyre, D., Passlack, M., Paterson, G., Stanley, C., Thoms, S., Zhou, H., Thayne, I., Kalna, K. III-V MOSFETs for Digital Applications with Silicon Co-Integration 39 46