Publications

Journal Articles

  1. Alqaysi, M., Martinez, A., Ahmeda, K., Ubochi, B., Kalna, K., Martinez Muniz, A. Impact of interface traps/defects and self-heating on the degradation of performance of a 4H-SiC VDMOSFET IET Power Electronics 12 11 2731 2740
  2. Wilson, L., Barker, J., Martinez, A., Martinez Muniz, A. DFT/NEGF study of discrete dopants in Si/III–V 3D FET Journal of Physics: Condensed Matter 31 14 144003
  3. Barker, J., Martinez, A., Martinez Muniz, A. Image charge models for accurate construction of the electrostatic self-energy of 3D layered nanostructure devices Journal of Physics: Condensed Matter 30 13 134002
  4. Martinez, A., Barker, J., Di Pietro, R., Martinez Muniz, A. Dissipative non-equilibrium Green function methodology to treat short range Coulomb interaction: current through a 1D nanostructure Journal of Physics: Condensed Matter 30 29 294003
  5. Wilson, L., Martinez, A., Martinez Muniz, A. Electron transport through 8-oxoG: NEGF/DFT study Journal of Computational Electronics
  6. Martinez, A., Price, A., Valin, R., Aldegunde, M., Barker, J., Martinez Muniz, A. Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective Journal of Computational Electronics 15 4 1130 1147
  7. Price, A., Martinez, A., Martinez Muniz, A. Impact of oxide thickness on the performance of a GaAs NWFET Journal of Physics: Conference Series 609 012004
  8. Nagy, D., Elmessary, M., Aldegunde, M., Valin, R., Martinez, A., Lindberg, J., Dettmer, W., Peric, D., Garcia-Loureiro, A., Kalna, K., Martinez Muniz, A. 3-D Finite Element Monte Carlo Simulations of Scaled Si SOI FinFET With Different Cross Sections IEEE Transactions on Nanotechnology 14 1 93 100
  9. Martinez, A., Barker, J., Aldegunde, M., Valin, R., Martinez Muniz, A. Study of Local Power Dissipation in Ultrascaled Silicon Nanowire FETs IEEE Electron Device Letters 36 1 2 4
  10. Price, A., Martinez, A., Martinez Muniz, A. Investigation on phonon scattering in a GaAs nanowire field effect transistor using the non-equilibrium Green's function formalism Journal of Applied Physics 117 16 164501
  11. Valin, R., Martinez, A., Barker, J., Martinez Muniz, A. Non-equilibrium Green's functions study of discrete dopants variability on an ultra-scaled FinFET Journal of Applied Physics 117 16 164505
  12. Valin, R., Aldegunde, M., Martinez, A., Barker, J., Martinez Muniz, A. Quantum transport of a nanowire field-effect transistor with complex phonon self–energy Journal of Applied Physics 116 8 084507
  13. Barker, J., Martinez, A., Aldegunde, M., Valin, R., Martinez Muniz, A. Causal self-energies for NEGF modelling of quantum nanowires Journal of Physics: Conference Series 526 012001
  14. Price, A., Martinez, A., Valin, R., Barker, J., Martinez Muniz, A. Impact of different electron-phonon scattering models on the electron transport in a quantum wire Journal of Physics: Conference Series 526 012007
  15. Seoane, N., Martinez, A., Martinez Muniz, A. A detailed coupled-mode-space non-equilibrium Green's function simulation study of source-to-drain tunnelling in gate-all-around Si nanowire metal oxide semiconductor field effect transistors Journal of Applied Physics 114 10 104307
  16. Barker, J., Martinez, A., Martinez Muniz, A. Self-energy Models for Scattering in Semiconductor Nanoscale Devices: Causality Considerations and the Spectral Sum Rule MRS Proceedings 1551 17 22
  17. Muniz, A., Martinez Muniz, A. Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations IEEE Electron Device Letters 33 2
  18. Martinez, A., Aldegunde, M., Brown, A., Roy, S., Asenov, A., Martinez Muniz, A. NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants Solid-State Electronics 71 101 105
  19. Martinez, A., Aldegunde, M., Seoane, N., Brown, A., Barker, J., Asenov, A., Martinez Muniz, A. Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors IEEE Transactions on Electron Devices 58 8 2209 2217
  20. Muniz, A., Martinez Muniz, A. The Non-equilibrium Green function approach as a TCAD tool for future CMOS technology
  21. Aldegunde, M., Martinez, A., Asenov, A., Martinez Muniz, A. Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors Journal of Applied Physics 110 9 094518
  22. Kalna, K., Martinez Muniz, A. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
  23. Muniz, A., Martinez Muniz, A. Full-band NEGF simulations of surface roughness in Si nanowires Journal of Physics: Conference Series 242
  24. Muniz, A., Martinez Muniz, A. Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs Journal of Computational Electronics 9 3-4
  25. Muniz, A., Martinez Muniz, A. Variability in Si Nanowire MOSFETs Due to the Combined Effect of Interface Roughness and Random Dopants: A Fully Three-Dimensional NEGF Simulation Study IEEE Transactions on Electron Devices 57 7
  26. Muniz, A., Martinez Muniz, A. A detailed 3D-NEGF simulation study of tunnelling in n-Si nanowire MOSFETs
  27. Muniz, A., Martinez Muniz, A. Impact of scattering on the performance of a Si GAA nanowire FETs: From diffusive to ballistic regime
  28. Muniz, A., Martinez Muniz, A. Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study IEEE Transactions on Electron Devices 56 7
  29. Martinez, A., Seoane, N., Brown, A., Barker, J., Asenov, A., Martinez Muniz, A. 3-D Nonequilibrium Green's Function Simulation of Nonperturbative Scattering From Discrete Dopants in the Source and Drain of a Silicon Nanowire Transistor IEEE Transactions on Nanotechnology 8 5 603 610
  30. Muniz, A., Martinez Muniz, A. Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques Journal of Computational Electronics 8 3-4
  31. Muniz, A., Martinez Muniz, A. Study of surface roughness in extremely small Si nanowire MOSFETs using fully-3D NEGFs
  32. Muniz, A., Martinez Muniz, A. A Comparison between a Fully-3D Real-Space Versus Coupled Mode-Space NEGF in the Study of Variability in Gate-All-Around Si Nanowire MOSFET
  33. Muniz, A., Martinez Muniz, A. Comparison of Density Gradient and NEGF for 3D Simulation of a Nanowire MOSFET
  34. Muniz, A., Martinez Muniz, A. Investigation of resistance in n-doped Si wires using NEGF formalism
  35. Kalna, K., Martinez Muniz, A. Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study IEEE Transactions on Nanotechnology
  36. Muniz, A., Martinez Muniz, A. Ballistic Quantum Simulators for Studying Variability in Nanotransistors Journal of Computational and Theoretical Nanoscience 5 12
  37. Muniz, A., Martinez Muniz, A. A full 3D non-equilibrium Green functions study of a stray charge in a nanowire MOS transistor Journal of Computational Electronics 7 3
  38. Muniz, A., Martinez Muniz, A. Advanced simulation of statistical variability and reliability in nano CMOS transistors
  39. Muniz, A., Martinez Muniz, A. Simulation of impurities with an attractive potential in fully 3-D real-space Non-Equilibrium Green’s Function quantum transport simulations
  40. Muniz, A., Martinez Muniz, A. 3D NEGF simulation of ‘ab initio’ scattering from discrete dopants in the source and drain of a nanowire transistor
  41. Kalna, K., Martinez Muniz, A. NEGF simulations of the effect of strain on scaled double gate nanoMOSFETs Journal of Computational Electronics
  42. Kalna, K., Martinez Muniz, A. Tetrahedral elements in self-consistent parallel 3D Monte Carlo simulations of MOSFETs Journal of Computational Electronics