Yr Athro Karol Kalna

Athro, Electronic and Electrical Engineering

+44 (0) 1792 606678

k.kalna@abertawe.ac.uk

Swyddfa Academaidd - B202
Ail lawr
Adeilad Dwyreinol Peirianneg
Campws y Bae

Ar gael ar gyfer Goruchwyliaeth Ôl-raddedig

Dolenni Ymchwil

https://orcid.org/0000-0002-6333-9189

Trosolwg

Arloesi ar gyflwyno III-V MOSFETs ar gyfer rhaglenni digidol

Datblygu paralel elfennau meidraidd drifft-drylediad 3D a blwch offer efelychu Monte Carlo.

Efelychu amrywioldeb transistor nano-raddfa wedi’i gymell gan ddeunyddiau a phroses wneuthuriad gan ddefnyddio 3D Monte Carlo a blwch offer drifft-drylediad.
Cydlynu gweithgareddau efelychu yn y prosiect "III-V MOSFETs for Ultimate CMOS" yn ymchwilio i III-V MOSFETs nano-raddfa a grant DUALLOGIC FP7 No. 1 STREP yr UE.

Dros 200 o gyhoeddiadau yn cynnwys 81 papur mewn cylchgronau megis Nano Letters, IEEE Trans. Electron Devices, Nanotechnol., Electron Device Lett., and Microwave Theory Tech.; J. Appl. Phys.; Appl. Phys. Lett.; Phys. Rev. B ac E; ACS Appl. Mater. & Interfaces, and Semicond. Sci. Technol, 19 gwahoddiad fel siaradwr.
Wedi bod yn rhan o bwyllgorau rhaglenni cynadleddau IEEE Nano 2009, 2011 ULIS 2010, IWCE 2015 ac EDISON 2015, Cadeirydd Rhaglen IWCN 2017.

Cydarwain Grwp Dyfeisiau Cyfrifannol Nanoelectroneg.

Meysydd Arbenigedd

Efelychu a modelu dyfeisiau lled-ddargludyddion

Cyhoeddiadau

Uchafbwyntiau Ymchwil

Iglesias, J., Nardone, A., Rengel, R., Kalna, K., Martín, M., & Pascual, E. (2023). Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening. 2D Materials, 10(2), 025011
https://doi.org/10.1088/2053-1583/acb1c2, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa62671
Seoane, N., Kalna, K., Cartoixa, X., & Garcia-Loureiro, A. (2022). Multilevel 3-D Device Simulation Approach Applied to Deeply Scaled Nanowire Field Effect Transistors. IEEE Transactions on Electron Devices, 69(9), 5276-5282.
https://doi.org/10.1109/ted.2022.3188945, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa60692
Rabhi, S., Oueldna, N., Perrin-Pellegrino, C., Portavoce, A., Kalna, K., Benoudia, M., & Hoummada, K. (2022). Thickness Effect on the Solid-State Reaction of a Ni/GaAs System. Nanomaterials, 12(15), 2633
https://doi.org/10.3390/nano12152633, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa61169
Thorpe, B., Shermer, S., & Kalna, K. (2022). Monte Carlo simulations of spin transport in nanoscale In 0.7Ga0.3As transistors: temperature and size effects. Semiconductor Science and Technology, 37(7), 075009
https://doi.org/10.1088/1361-6641/ac70f0, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa61068
Thorpe, B., SCHIRMER, S., & Kalna, K. (2022). Monte Carlo simulations of spin transport in nanoscale$\mathrm{In_{0.7}Ga_{0.3}As}$ transistors: temperature and size effects. Semiconductor Science and Technology, 37(7), 075009
https://doi.org/10.1088/1361-6641/ac70f0, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa60258

Holl Ymchwil

Erthyglau Cylchgronau

Iglesias, J., Nardone, A., Rengel, R., Kalna, K., Martín, M., & Pascual, E. (2023). Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening. 2D Materials, 10(2), 025011
https://doi.org/10.1088/2053-1583/acb1c2, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa62671
Seoane, N., Kalna, K., Cartoixa, X., & Garcia-Loureiro, A. (2022). Multilevel 3-D Device Simulation Approach Applied to Deeply Scaled Nanowire Field Effect Transistors. IEEE Transactions on Electron Devices, 69(9), 5276-5282.
https://doi.org/10.1109/ted.2022.3188945, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa60692
Rabhi, S., Oueldna, N., Perrin-Pellegrino, C., Portavoce, A., Kalna, K., Benoudia, M., & Hoummada, K. (2022). Thickness Effect on the Solid-State Reaction of a Ni/GaAs System. Nanomaterials, 12(15), 2633
https://doi.org/10.3390/nano12152633, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa61169
Thorpe, B., Shermer, S., & Kalna, K. (2022). Monte Carlo simulations of spin transport in nanoscale In 0.7Ga0.3As transistors: temperature and size effects. Semiconductor Science and Technology, 37(7), 075009
https://doi.org/10.1088/1361-6641/ac70f0, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa61068
Thorpe, B., SCHIRMER, S., & Kalna, K. (2022). Monte Carlo simulations of spin transport in nanoscale$\mathrm{In_{0.7}Ga_{0.3}As}$ transistors: temperature and size effects. Semiconductor Science and Technology, 37(7), 075009
https://doi.org/10.1088/1361-6641/ac70f0, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa60258
Seoane, N., Fernandez, J., Kalna, K., Comesana, E., & Garcia-Loureiro, A. (2021). Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs. IEEE Electron Device Letters, 42(10), 1416-1419.
https://doi.org/10.1109/led.2021.3109586, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa58107
Ahmeda, K., Ubochi, B., Alqaysi, M., Al-Khalidi, A., Wasige, E., & Kalna, K. (2020). The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation. Microelectronics Reliability, 115, 113965
https://doi.org/10.1016/j.microrel.2020.113965, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa55553
Mohamed, A., Ghazali, N., Chong, H., Cobley, R., Li, L., & Kalna, K. (2020). Channel Mobility and Contact Resistance in Scaled ZnO Thin-Film Transistors. Solid-State Electronics, 172, 107867
https://doi.org/10.1016/j.sse.2020.107867, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa54909
Forster, S., Chaussende, D., & Kalna, K. (2020). SiC/Al4SiC4-Based Heterostructure Transistors. ACS Applied Electronic Materials, 2(9), 3001-3007.
https://doi.org/10.1021/acsaelm.0c00614, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa55561
https://pubs.acs.org/doi/abs/10.1021/acsaelm.0c00614
Islam, A., Aynul, A., & Kalna, K. (2020). Analysis of Potential and Electron Density Behaviour in Extremely Scaled Si and InGaAs MOSFETs Applying Monte Carlo Simulations. Journal of Physics: Conference Series, 1637, 012007
https://doi.org/10.1088/1742-6596/1637/1/012007, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa55818
Duffy, S., Benbakhti, B., Zhang, W., Ahmeda, K., Kalna, K., Boucherta, M., Mattalah, M., Chahdi, H., Bourzgui, N., & Soltani, A. (2020). A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 67(5), 1924-1930.
https://doi.org/10.1109/ted.2020.2980329, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa54035
Nagy, D., Espineira, G., Indalecio, G., Garcia-Loureiro, A., Kalna, K., & Seoane, N. (2020). Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes. IEEE Access, 8, 53196-53202.
https://doi.org/10.1109/access.2020.2980925, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa53939
Seoane, N., Nagy, D., Indalecio, G., Espiñeira, G., Kalna, K., & García-Loureiro, A. (2019). A Multi-Method Simulation Toolbox to Study Performance and Variability of Nanowire FETs. Materials, 12(15), 2391
https://doi.org/10.3390/ma12152391, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa51467
Islam, A., Kalna, K., & Kalna, K. (2019). Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects. IOP Conference Series: Materials Science and Engineering, 504, 012021
https://doi.org/10.1088/1757-899X/504/1/012021, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa50487
Espineira, G., Nagy, D., Indalecio, G., Garcia-Loureiro, A., Kalna, K., Seoane, N., & Kalna, K. (2019). Impact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET. IEEE Electron Device Letters, 40(4), 510-513.
https://doi.org/10.1109/LED.2019.2900494, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa50182
Alqaysi, M., Martinez, A., Ahmeda, K., Ubochi, B., Kalna, K., & Martinez Muniz, A. (2019). Impact of interface traps/defects and self-heating on the degradation of performance of a 4H-SiC VDMOSFET. IET Power Electronics, 12(11), 2731-2740.
https://doi.org/10.1049/iet-pel.2018.5897, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa52363
Adenekan, O., Holland, P., & Kalna, K. (2019). Scaling and optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub–50 V applications. Microelectronics Reliability, 99, 213-221.
https://doi.org/10.1016/j.microrel.2019.04.008, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa50951
Forster, S., Chaussende, D., & Kalna, K. (2019). Monte Carlo Simulations of Electron Transport Characteristics of Ternary Carbide Al4SiC4. ACS Applied Energy Materials, 2(1), 715-720.
https://doi.org/10.1021/acsaem.8b01767, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa50391
Nagy, D., Indalecio, G., Garcia-Loureiro, A., Espineira, G., Elmessary, M., Kalna, K., & Seoane, N. (2019). Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs. IEEE Access, 7, 12790-12797.
https://doi.org/10.1109/access.2019.2892592, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa48909
Indalecio, G., Garcia-Loureiro, A., Elmessary, M., Kalna, K., & Seoane, N. (2018). Spatial Sensitivity of Silicon GAA Nanowire FETs under Line Edge Roughness Variations. IEEE Journal of the Electron Devices Society, 1-1.
https://doi.org/10.1109/JEDS.2018.2828504, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa39889
Mohamed, A., Oxland, R., Aldegunde, M., Hepplestone, S., Sushko, P., Kalna, K., & Kalna, K. (2018). Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS. Solid-State Electronics
https://doi.org/10.1016/j.sse.2018.01.006, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa38406
Seoane, N., Indalecio, G., Nagy, D., Kalna, K., & Garcia-Loureiro, A. (2018). Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability. IEEE Transactions on Electron Devices, 65(2), 456-462.
https://doi.org/10.1109/TED.2017.2785325, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa38327
Adenekan, O., Holland, P., & Kalna, K. (2018). Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applications. Microelectronics Journal, 81, 94-100.
https://doi.org/10.1016/j.mejo.2018.09.007, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa44949
Duffy, S., Benbakhti, B., Kalna, K., Boucherta, M., Zhang, W., Bourzgui, N., & Soltani, A. (2018). Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. IEEE Access, 6, 42721-42728.
https://doi.org/10.1109/ACCESS.2018.2861323, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa44608
Duffy, S., Benbakhti, B., Kalna, K., Boucherta, M., Zhang, W., Bourzgui, N., & Soltani, A. (2018). Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. IEEE Access, 6, 42721-42728.
https://doi.org/10.1109/access.2018.2861323, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa43367
Nagy, D., Indalecio, G., Garcia-Loureiro, A., Elmessary, M., Kalna, K., & Seoane, N. (2018). FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability. IEEE Journal of the Electron Devices Society, 6, 332-340.
https://doi.org/10.1109/JEDS.2018.2804383, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa38852
Ahmeda, K., Ubochi, B., Benbakhti, B., Duffy, S., Soltani, A., Zhang, W., & Kalna, K. (2017). Role of Self-Heating and Polarization in AlGaN/GaN Based Heterostructures. IEEE Access, 5(October), 20946-20952.
https://doi.org/10.1109/ACCESS.2017.2755984, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa36147
https://ieeexplore.ieee.org/document/8055440
Ubochi, B., Faramehr, S., Ahmeda, K., Igić, P., & Kalna, K. (2017). Operational frequency degradation induced trapping in scaled GaN HEMTs. Microelectronics Reliability, 71, 35-40.
https://doi.org/10.1016/j.microrel.2017.02.008, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa32025
Thorpe, B., Kalna, K., Langbein, F., & Shermer, S. (2017). Monte Carlo simulations of spin transport in a strained nanoscale InGaAs field effect transistor. Journal of Applied Physics, 122(22), 223903
https://doi.org/10.1063/1.4994148, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa37408
Duffy, S., Benbakhti, B., Mattalah, M., Zhang, W., Bouchilaoun, M., Boucherta, M., Kalna, K., Bourzgui, N., Maher, H., Soltani, A., & Kalna, K. (2017). Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate. ECS Journal of Solid State Science and Technology, 6(11), S3040-S3043.
https://doi.org/10.1149/2.0111711jss, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa35704
Ubochi, B., Ahmeda, K., & Kalna, K. (2017). Buffer Trap Related Knee Walkout and the Effects of Self-Heating in AlGaN/GaN HEMTs. ECS Journal of Solid State Science and Technology, 6(11), S3005-S3009.
https://doi.org/10.1149/2.0021711jss, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa35705
Kalna, K. (2017). Fluctuation Sensitivity Map: A Novel Technique to Characterise and Predict Device Behaviour Under Metal Grain Work-Function Variability Effects. IEEE Transactions on Electron Devices, 64(4), 1695-1701.
https://doi.org/10.1109/TED.2017.267006, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa32121
Elmessary, M., Nagy, D., Aldegunde, M., Seoane, N., Indalecio, G., Lindberg, J., Dettmer, W., Perić, D., García-Loureiro, A., Kalna, K., & Peric, D. (2017). Scaling/LER Study of Si GAA Nanowire FET using 3D Finite Element Monte Carlo Simulations. Solid-State Electronics, 128, 17-24.
https://doi.org/10.1016/j.sse.2016.10.018, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa30748
Kryvchenkova, O., Abdullah, I., Macdonald, J., Elliott, M., Anthopoulos, T., Lin, Y., Igić, P., Kalna, K., Cobley, R., & Igic, P. (2016). Nondestructive Method for Mapping Metal Contact Diffusion in In2O3 Thin-Film Transistors. ACS Applied Materials & Interfaces, 8(38), 25631-25636.
https://doi.org/10.1021/acsami.6b10332, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa29930
Benbakhti, B., Chan, K., Soltani, A., & Kalna, K. (2016). Device and Circuit Performance of the Future Hybrid III–V and Ge-Based CMOS Technology. IEEE Transactions on Electron Devices, 63(10), 3893-3899.
https://doi.org/10.1109/TED.2016.2603188, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa33255
http://ieeexplore.ieee.org/document/7563860/
Indalecio, G., Garcia-Loureiro, A., Seoane Iglesias, N., & Kalna, K. (2016). Study of Metal-Gate Work-Function Variation Using Voronoi Cells: Comparison of Rayleigh and Gamma Distributions. IEEE Transactions on Electron Devices, 63(6), 2625-2628.
https://doi.org/10.1109/TED.2016.2556749, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa28833
Seoane, N., Aldegunde, M., Nagy, D., Elmessary, M., Indalecio, G., García-Loureiro, A., Kalna, K., & Kalna, K. (2016). Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes. Semiconductor Science and Technology, 31(7), 075005
https://doi.org/10.1088/0268-1242/31/7/075005, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa29411
Seoane, N., Indalecio, G., Aldegunde, M., Nagy, D., Elmessary, M., Garcia-Loureiro, A., & Kalna, K. (2016). Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs. IEEE Transactions on Electron Devices, 63(3), 1209-1216.
https://doi.org/10.1109/TED.2016.2516921, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa27207
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7393821
Elmessary, M., Nagy, D., Aldegunde, M., Lindberg, J., Dettmer, W., Peric, D., Garcia-Loureiro, A., & Kalna, K. (2016). Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors. IEEE Transactions on Electron Devices, 63(3), 933-939.
https://doi.org/10.1109/TED.2016.2519822, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa35988
Nagy, D., Elmessary, M., Aldegunde, M., Valin, R., Martinez, A., Lindberg, J., Dettmer, W., Peric, D., Garcia-Loureiro, A., Kalna, K., & Martinez Muniz, A. (2015). 3-D Finite Element Monte Carlo Simulations of Scaled Si SOI FinFET With Different Cross Sections. IEEE Transactions on Nanotechnology, 14(1), 93-100.
https://doi.org/10.1109/TNANO.2014.2367095, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa21854
Barnett, C., Kryvchenkova, O., Wilson, L., Maffeis, T., Kalna, K., Cobley, R., & Kalna, K. (2015). The role of probe oxide in local surface conductivity measurements. Journal of Applied Physics, 117(17), 174306
https://doi.org/10.1063/1.4919662, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa21857
Indalecio, G., Seoane, N., Aldegunde, M., Kalna, K., García-Loureiro, A., & Kalna, K. (2015). Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold. Journal of Low Power Electronics, 11(2), 256-262.
https://doi.org/10.1166/jolpe.2015.1371, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa25046
Kryvchenkova, O., Cobley, R., Kalna, K., Cobley, R., & Kalna, K. (2015). The Current Crowding Effect in ZnO Nanowires with a Metal Contact. Materials Today: Proceedings, 2(1), 309-314.
https://doi.org/10.1016/j.matpr.2015.04.052, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa23333
Lord, A., Maffeis, T., Kryvchenkova, O., Cobley, R., Kalna, K., Kepaptsoglou, D., Ramasse, Q., Walton, A., Ward, M., Köble, J., & Wilks, S. (2015). Controlling the Electrical Transport Properties of Nanocontacts to Nanowires. Nano Letters, 15(7), 4248-4254.
https://doi.org/10.1021/nl503743t, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa22729
http://pubs.acs.org/doi/abs/10.1021/nl503743t
Barnett, C., Kryvchenkova, O., Wilson, L., Maffeis, T., Kalna, K., Cobley, R., Maffeis, T., Cobley, R., & Kalna, K. (2015). The role of probe oxide in local surface conductivity measurements. Journal of Applied Physics, 117(17), 174306
https://doi.org/10.1063/1.4919662, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa21324
http://scitation.aip.org/content/aip/journal/jap/117/17/10.1063/1.4919662
Aldegunde, M., Kalna, K., & Kalna, K. (2015). Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes. Computer Physics Communications, 189, 31-36.
https://doi.org/10.1016/j.cpc.2014.11.020, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa21855
Seoane, N., Indalecio, G., Comesana, E., Aldegunde, M., Garcia-Loureiro, A., & Kalna, K. (2014). Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET. IEEE Transactions on Electron Devices, 61(2), 466-472.
https://doi.org/10.1109/TED.2013.2294213, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa21848
Indalecio, G., Aldegunde, M., Seoane, N., Kalna, K., García-Loureiro, A., & Kalna, K. (2014). Statistical study of the influence of LER and MGG in SOI MOSFET. Semiconductor Science and Technology, 29(4), 045005
https://doi.org/10.1088/0268-1242/29/4/045005, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa21851
Aldegunde, M., Hepplestone, S., Sushko, P., Kalna, K., & Kalna, K. (2014). Multi-scale simulations of a Mo/n+–GaAs Schottky contact for nano-scale III–V MOSFETs. Semiconductor Science and Technology, 29(5), 054003
https://doi.org/10.1088/0268-1242/29/5/054003, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa21852
Faramehr, S., Kalna, K., Igić, P., & Igic, P. (2014). Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications. Semiconductor Science and Technology, 29(11), 115020
https://doi.org/10.1088/0268-1242/29/11/115020, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa21204
Faramehr, S., Kalna, K., Igić, P., & Igic, P. (2014). Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application. Semiconductor Science and Technology, 29(2), 025007
https://doi.org/10.1088/0268-1242/29/2/025007, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa21203
Aldegunde, M., Hepplestone, S., Sushko, P., Kalna, K., & Kalna, K. (2014). Multi-scale simulations of a Mo/n+–GaAs Schottky contact for nano-scale III–V MOSFETs. Semiconductor Science and Technology, 29(5), 054003
https://doi.org/10.1088/0268-1242/29/5/054003, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa25048
Kryvchenkova, O., Cobley, R., & Kalna, K. (2014). Self-consistent modelling of tunnelling spectroscopy on III–V semiconductors. Applied Surface Science, 295, 173-179.
https://doi.org/10.1016/j.apsusc.2013.12.182, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa21323
Lindberg, J., Aldegunde, M., Nagy, D., Dettmer, W., Kalna, K., Garcia-Loureiro, A., & Peric, D. (2014). Quantum Corrections Based on the 2-D Schroedinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs. IEEE Transactions on Electron Devices, 61(2), 423-429.
https://doi.org/10.1109/TED.2013.2296209, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa21451
Seoane, N., Indalecio, G., Comesana, E., Garcia-Loureiro, A., Aldegunde, M., Kalna, K., & Kalna, K. (2013). Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET. IEEE Electron Device Letters, 34(2), 205-207.
https://doi.org/10.1109/led.2012.2230313, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa14323
Aldegunde, M., Garcia-Loureiro, A., & Kalna, K. (2013). 3D Finite Element Monte Carlo Simulations of Multigate Nanoscale Transistors. IEEE Transactions on Electron Devices, 60(5), 1561-1567.
https://doi.org/10.1109/ted.2013.2253465, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa14745
Benbakhti, B., Martinez, A., Kalna, K., Hellings, G., Eneman, G., Meyer, K., & Meuris, M. (2012). Simulation Study of Performance for a 20-nm Gate Length In0.53Ga0.47 As Implant Free Quantum Well MOSFET. IEEE Transactions on Nanotechnology, 11(4), 808-817.
https://doi.org/10.1109/tnano.2012.2199514, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa12691
Kalna, K. (2012). 3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In_0.75Ga_0.25As MOSFETs. Solid-State Electronics, 69, 43
https://doi.org/10.1016/j.sse.2011.11.031, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa12692
Kalna, K. (2011). Design and analysis of the In_0.53Ga_0.47As implant-free quantum-well device structure. Microelectronic Engineering
https://doi.org/10.1016/j.mee.2010.11.019, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6064
Kalna, K. (2011). Numerical analysis of the new Implant-Free Quantum-Well CMOS: DualLogic approach. Solid-State Electronics
https://doi.org/10.1016/j.sse.2011.05.006, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6292
Kalna, K. (2011). Monte Carlo simulations of mobility in doped GaAs using self-consistent Fermi–Dirac statistics. Semiconductor Science and Technology
https://doi.org/10.1088/0268-1242/26/5/055007, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6293
Kalna, K. & Martinez Muniz, A. (2011). Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
https://doi.org/10.1109/TCAD.2011.2107990, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6294
Kalna, K. (2011). Monte Carlo Study of Ultimate Channel Scaling in Si and In0.3Ga0.7As Bulk MOSFETs. IEEE Transactions on Nanotechnology, 10(6)
https://doi.org/10.1109/TNANO.2011.2165555, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa9160
Kalna, K. (2010). Electron velocity decline in Si nanoscales MOSFETs with the shortening of gate length. Journal of Physics: Conference Series
https://doi.org/10.1088/1742-6596/242/1/012011, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6069
Kalna, K. (2010). Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures. Microelectronics Reliability
https://doi.org/10.1016/j.microrel.2009.11.017, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6065
Kalna, K. (2010). Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes. Computer Physics Communications
https://doi.org/10.1016/j.cpc.2009.08.013, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6062
Kalna, K. (2009). Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In_0.3Ga_0.7As MOSFETs. Microelectronic Engineering
https://doi.org/10.1016/j.mee.2009.03.024, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6063
Kalna, K. (2009). Impact of intrinsic parameter fluctuations on the performance of In_0.75Ga_0.25As implant free MOSFETs. Semiconductor Science and Technology
https://doi.org/10.1088/0268-1242/24/5/055011, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6066
Kalna, K. (2009). Effect of interface state trap density on the performance of scaled surface channel In_0.3Ga_0.7As MOSFETs. Journal of Physics: Conference Series
https://doi.org/10.1088/1742-6596/193/1/012122, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6067
Kalna, K. (2009). The characterization of the hole transport in Sb based strained quantum wells. Journal of Physics: Conference Series
https://doi.org/10.1088/1742-6596/193/1/012128, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6068
Kalna, K. & Martinez Muniz, A. (2009). Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study. IEEE Transactions on Nanotechnology
https://doi.org/10.1109/TNANO.2008.917776, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6070
Kalna, K. (2009). Monte Carlo Simulations of In_0.75Ga_0.25As MOSFETs at 0.5 V Supply Voltage for High-Performance CMOS. International Journal of High Speed Electronics and Systems
https://doi.org/10.1142/S0129156409006126, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6071
Kalna, K. (2009). Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices. IEEE Transactions on Electron Devices
https://doi.org/10.1109/TED.2009.2028400, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6073
Kalna, K., Seoane, N., Garcia-Loureiro, A., Thayne, I., Asenov, A., & Kalna, K. (2008). Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs. IEEE Transactions on Electron Devices, 55(9), 2297-2306.
https://doi.org/10.1109/TED.2008.927658, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6074
Thayne, I., Hill, R., Moran, D., Kalna, K., Asenov, A., & Passlack, M. (2008). Comments on 'High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm'. IEEE Electron Device Letters, 29(10), 1085
https://doi.org/10.1109/LED.2008.2002752, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6072
Kalna, K. & Martinez Muniz, A. (2008). NEGF simulations of the effect of strain on scaled double gate nanoMOSFETs. Journal of Computational Electronics
https://doi.org/10.1007/s10825-008-0212-8, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6059
Seoane, N., Aldegunde, M., García-Loureiro, A., Valin, R., & Kalna, K. (2008). Random dopant related variability in the 30 nm gate length In_0.75Ga_0.25As implant free MOSFET. Journal of Computational Electronics
https://doi.org/10.1007/s10825-008-0233-3, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6060
Kalna, K. & Martinez Muniz, A. (2008). Tetrahedral elements in self-consistent parallel 3D Monte Carlo simulations of MOSFETs. Journal of Computational Electronics
https://doi.org/10.1007/s10825-008-0241-3, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6061
Kalna, K. (2008). Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors. Physical Review E, 77(5)
https://doi.org/10.1103/PhysRevE.77.056702, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa6075

Cyfraniadau Cynadleddau

Shermer, S., Burwell, G., Evans, J., Kalna, K., & Langbin, F. (2019). Dilute magnetic contact for a spin GaN HEMT. In Semiconductor and Integrated OptoElectronics Conference (SIOE) Conference, Cardiff, UK, 16-18 April 2019
SU Repository: https://cronfa.swan.ac.uk/Record/cronfa61074
https://orca.cardiff.ac.uk/id/eprint/121866/
Elmessary, M., Nagy, D., Aldegunde, M., Seoane, N., Indalecio, G., Lindberg, J., Dettmer, W., Peric, D., Garcia-Loureiro, A., & Kalna, K. (2016). Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations. In 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) (pp. 52-55).
https://doi.org/10.1109/ULIS.2016.7440050, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa27208
Indalecio, G., Garcia-Loureiro, A., Aldegunde, M., Kalna, K., & Kalna, K. (2013). Study of statistical variability in nanoscale transistors introduced by LER, RDF and MGG. (pp. 95-98).
https://doi.org/10.1109/cde.2013.6481351, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa14752
Kalna, K., Ayubi-Moak, J., & Kalna, K. (2012). Monte Carlo simulations of inverse channel versus implant free In_0.3Ga_0.7As MOSFETs. (pp. 1-4).
https://doi.org/10.1109/iwce.2012.6242838, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa14749
Faramehr, S., Igic, P., Kalna, K., & Kalna, K. (2012). TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT. (pp. 11-14).
https://doi.org/10.1109/asdam.2012.6418566, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa14750
Martinez, A., Aldegunde, M., Kalna, K., Barker, J., & Kalna, K. (2012). Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors. (pp. 1-4).
https://doi.org/10.1109/iwce.2012.6242845, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa14751
Martinez, A., Kalna, K., & Aldegunde, M. (2011). Impact of phonon scattering in a Si GAA nanowire FET with a single donor in the channel. (pp. 1348-1351).
https://doi.org/10.1109/nano.2011.6144652, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa14753
Islam, A. & Kalna, K. (2010). Monte Carlo simulations of channel scaling to ultimate limit in Si and In0.3Ga0.7As bulk MOSFETs. (pp. 321-324).
https://doi.org/10.1109/asdam.2010.5666362, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa14754
Benbakhti, B., Towie, E., Kalna, K., Hellings, G., Eneman, G., Meyer, K., Meuris, M., Asenov, A., & Kalna, K. (2010). Monte Carlo analysis of In0.53Ga0.47as Implant-Free Quantum-Well device performance. (pp. 1-2).
https://doi.org/10.1109/snw.2010.5562589, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa14755
Aldegunde, M., Garcia-Loureiro, A., Seoane, N., Asenov, A., & Kalna, K. (2009). Mesh Generation for the "Atomistic" Simulation of Variability in InGaAs Implant-Free NanoMOSFETs. In CDE 2009. Spanish Conference on Electron Devices, 11-13 Feb. 2009 (pp. 211-214).
https://doi.org/10.1109/SCED.2009.4800468, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa9159
Aldegunde, M., Garcia-Loureiro, A., Martinez, A., & Kalna, K. (2008). 3D Monte Carlo simulation of Tri-Gate MOSFETs using tetrahedral finite elements. (pp. 153-156).
https://doi.org/10.1109/sispad.2008.4648260, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa14757
Kalna, K., Asenov, A., Ayubi-Moak, J., Craven, A., Droopad, R., Hill, R., Holland, M., Li, X., Long, A., Longo, P., MacIntyre, D., Passlack, M., Paterson, G., Stanley, C., Thoms, S., Zhou, H., Thayne, I., & Kalna, K. (2008). III-V MOSFETs for Digital Applications with Silicon Co-Integration. (pp. 39-46).
https://doi.org/10.1109/asdam.2008.4743354, SU Repository: https://cronfa.swan.ac.uk/Record/cronfa14758

Goruchwyliaeth

A Theoretical and Experimental Study of Cubic Boron Arsenide for Device Applications (cyfredol)

PhD

Goruchwyliwr arall: Prof Lijie Li
Grid connected photovoltaic (PV) for vehicle charge station (cyfredol)

PhD

Goruchwyliwr arall: Dr Zhongfu Zhou
Power Dissipation in Nanosheet FETs Simulated by 3D Finite Element Monte Carlo (cyfredol)

PhD

Goruchwyliwr arall: Dr Antonio Martinez Muniz
Gate Oxide Reliability Assessment for Enhanced Performance and Longevity in Electric Vehicle Power Electronics (cyfredol)

MSc

Goruchwyliwr arall: Prof Mike Jennings
The study and evaluation of ohmic contacts on wide band gap semiconductors (cyfredol)

MSc

Goruchwyliwr arall: Prof Mike Jennings

Modiwlau a Addysgir

EG-319 Integrated Circuit Design

To provide an overview of the BiCMOS and CMOS technologies and the concepts of designing analog and digital integrated circuits in the context of CMOS technology.
EG-355 Quantum Devices

To introduce state-of-the-art semiconductor devices like fin field effect transistors (FinFETs), metal-oxide-semiconductor field effect transistors (MOSFETs), high-electron mobility transistors (HEMTs), quantum well light emitting diodes (LEDs) & lasers, and resonant tunnelling diodes (RTDs). To evaluate the performance and design of state-of-the-art nanoscale semiconductor devices based on quantum-mechanical confinement.
EGA211 Semiconductor Technology

The module introduces semiconductor fundamentals, semiconductor processing, device fabrication technology and device characterization.