Publications

Journal Articles

  1. & Analysis of GaN HEMTs Switching Transients Using Compact Model. IEEE Transactions on Electron Devices 64(7), 2900-2905.
  2. & High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible with SOI FinFET Technology. IEEE Electron Device Letters 38(6), 1-1.
  3. & Operational frequency degradation induced trapping in scaled GaN HEMTs. Microelectronics Reliability 71, 35-40.
  4. & Implementation and Stability Study of Dynamic Droop in Islanded Microgrids. IEEE Transactions on Energy Conversion 31(3), 821-832.
  5. & Nondestructive Method for Mapping Metal Contact Diffusion in In2O3Thin-Film Transistors. ACS Applied Materials & Interfaces 8(38), 25631-25636.
  6. Exponential ADE Solution Based Compact Model of Planar Injection Enhanced IGBT Dedicated to Robust Power Converter Design. IEEE Transactions on Power Electronics 30(4), 1914-1924.
  7. & MPPT algorithm test on a photovoltaic emulating system constructed by a DC power supply and an indoor solar panel. Energy Conversion and Management 85, 460-469.
  8. & Design and simulation of a novel 1400 V–4000 V enhancement mode buried gate GaN HEMT for power applications. Semiconductor Science and Technology 29(11), 115020
  9. & Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application. Semiconductor Science and Technology 29(2), 025007
  10. & Exploiting PV Inverters to Support Local Voltage—A Small-Signal Model. IEEE Transactions on Energy Conversion 29(2), 453-462.
  11. & Load current observer based feed-forward DC bus voltage control for active rectifiers. Electric Power Systems Research 84(1), 165-173.
  12. & A lateral double-diffused magnetic sensitive metal-oxide-semiconductor field-effect transistor with integrated n-type Hall plate. Applied Physics Letters 100(26), 263507
  13. & Multi-megawatt offshore wave energy converters – electrical system configuration and generator control strategy. IET Renewable Power Generation 5(1), 10-17.
  14. High-speed electro-thermal modelling of a three-phase insulated gate bipolar transistor inverter power module. International Journal of Electronics
  15. & Compact model of the IGBTs with localized lifetime control dedicated to power circuit simulations. Solid-State Electronics 54(3), 268-274.
  16. Design and analysis of a feedforward control scheme for a three-phase voltage source pulse width modulation rectifier using sensorless load current signal. IET Power Electronics
  17. An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor. International Journal of Electronics
  18. Optimisation of 100V high side LDMOS using multiple simulation techniques.
  19. X-ray photoelectron spectroscopy studies on the formation of chromium contacts to single-crystal CVD diamond. Surface Science
  20. & All Injection Level Power PiN Diode Model Including Temperature Dependence. , 719-725.
  21. & Operating frequency and grounding issues regarding active junction isolation in the power integrated circuits. , 79-81.
  22. & Transient blocking characteristics of highly efficient junction isolations based on standard CMOS process. , 1217-1222.
  23. & New physically-based PiN diode compact model for circuit modelling applications. , 257-263.