Christiane’s research interests are in the areas of surface science and nanostructures. She has been looking into ways of systematically controlling the growth parameters for the epitaxial growth of nitride quantum dots, metal nano-contacts on GaN and silicide nanostructures. Another research area is the fabrication and investigation of two-dimensional arrays of metallofullerenes on surfaces for potential applications in quantum computation. Christiane has 15 years of experience in surface science, especially in epitaxial growth, scanning tunnelling microscopy (STM) and electron diffraction techniques (RHEED, LEED).

Recent publications

• D.F. Leigh, C. Nörenberg, D. Cattaneo, J.H.G. Owen, K. Porfyrakis, A. Li Bassi, A. Ardavan, G.A.D. Briggs, Self-assembly of trimetallic nitride template fullerenes on surfaces studied by STM, submitted to Surface Science (2006).
• C. Nörenberg, M.A. Moram and P.J. Dobson: Surface structures of scandium silicides grown on Si(111) studied by STM, AFM and electron diffraction, Surface Science (2006), in print.
• R.A. Oliver, C. Nörenberg, M.G. Martin, A. Crossley, M.R.Castell, and G.A.D. Briggs: Common methods for the preparation of clean A- and B-type GaN surfaces assessed by STM, RHEED and XPS, Inst. Phys. Conf. Ser. 180 (2003) 329.
• R.A. Oliver, C. Nörenberg, M.G. Martin, A. Crossley, M.R.Castell, and G.A.D. Briggs: Gallium nitride surface preparation optimised using in-situ scanning tunnelling microscopy, Appl. Surf. Sci. 214 (2003) 1.
• R.A. Oliver, C. Nörenberg, M.G. Martin, M.R.Castell, L. Allers and G.A.D. Briggs: The effect of V:III ratio on the growth of InN nanostructures by molecular beam epitaxy, Surf. Sci. 532-535C (2003) 806.
• C. Nörenberg, R.A. Oliver, M.G. Martin, L. Allers, M.R.Castell and G.A.D. Briggs: Stranski-Krastanov growth of InN nanostructures on GaN studied by RHEED, STM and AFM, phys. stat. sol.(a) 194 (2002) 536.
• C. Nörenberg, M.G. Martin, R.A. Oliver, M.R.Castell and G.A.D. Briggs: Heteroepitaxial growth of InN islands studied by STM and AFM, J. Phys. D: Appl. Phys. 35 (2002) 615.
• C. Nörenberg, M.G. Martin, R.A. Oliver, M.R.Castell and G.A.D. Briggs: Heteroepitaxial growth of InN islands on GaN(0001) and Si(111): a combined STM/AFM study, Inst. Phys. Conf. Ser. 169 (2001) 539.