Quantum Transport: Parallel 3D Non-Equilibrium Green's Function (NEGF) simulations

Parallel 3D Non-Equilibrium Green's Function (NEGF) simulation

When dimensions of semiconductor devices are on the nanoscale in all directions, 3D quantum transport has to be considered. We are using then 3D real-space Non-Equilibrium Green's Function technique to simulate the quantum transport in nanowire and Fin-like field effect transistors for future digital applications.

- simulated nanoscale transistors: Si FinFETs and nanowire transistors

- uses a mode space or a 3D real space representations.

- considering surface roughness

- including random discrete dopants

- in presence of electron-phonon scattering

- the effect of exchange-correlation has been taken into account in a Local Density Approximation (LDA).

  • Simulated nanoscale transistors: Si FinFETs and nanowire transistors
  • Uses a mode space or a 3D real space representations.

All simulations use the recursive algorithm for Gr and G<.

  • considering surface roughness
  • including random discrete dopants
  • in presence of electron-phonon scattering
  • the effect of exchange-correlation has been taken into account in a Local Density Approximation (LDA).

Study of silicon nanowire transistors:‌‌

Spectral-density-in-silicon-junctionless-nanowire-transistor-showing-the-local-p

Spectral density in silicon junctionless nanowire transistor showing the local potential of the impurities in the channel.Simulations-and-modelling-of-GaN-HEMTs

 

Current-spectral-density-for-nanowire-with-a-dopant-in-the-middle-of-the-channel

Current spectral density for nanowire with a dopant in the middle of the channel.