Parallel 2D Non-Equilibrium Green's Function (NEGF) simulations
When the dimensions of semiconductor devices are on nanoscale, the carrier transport has to be described using quantum-mechanics. The quantum phenomena can be utilised to achieve unique properties and functionality of semiconductor devices at nanoscale. We are using quantum transport techniques to simulate nanoscale transistors in 2D real space like bulk/double gate Si MOSFET and Implant Free InGaAs MOSFET.
- uses a full 2D real space representation
- includes Γ and L valleys
- Simulated nanoscale transistors: bulk/double gate Si MOSFET and Implant Free InGaAs MOSFET
- Uses a full 2D real space representation
- Includes Γ and L valleys
Study of the 20 nm gate length Implant Free In0.53Ga0.47As MOSFET:
ID-VG characteristics of the 20 nm gate length Implant Free In0.53Ga0.47As MOSFET for different channel thicknesses.
Band structure of InXGa1-XAs materials. The energy gap between the -L valleys is between 300 meV and 500 meV in dependence on the Indium content (x).
Conduction band and electron density profiles at the middle of the device (VG=0.9V) for the 5 nm channel thickness.