Parallel 3D finite element ensemble Monte Carlo device simulations

Parallel 3D finite element ensemble Monte Carlo device simulations

‌‌Parallel 3D finite element ensemble Monte Carlo device simulations have the following capabilities:

  • 3D unstructured device mesh using tetrahedral elements
  • Ensemble Monte Carlo engine with transport model for Si, strain Si, and III-V semiconductors
  • Scattering mechanisms:
    • Bulk related: 
      • polar optical phonons
      • inter/intra-valley optical phonons
      • acoustic phonons
      • ionized and neutral impurities (screening models: Debye-Hückel, Thomas-Fermi, static, q-dependent)
      • alloy scattering
    • Dielectric-semiconductor interface related:
      • interface roughness
      • interface phonons
  • Fermi-Dirac (self-consistent) or Boltzmann statistics
  • quantum corrections using 1) a density gradient approach (adapted for the finite elements) or 2) a newly developed 2D finite element Schroedinger Equation solution
  • finite element mesh adapted electric field calculations, charge assignment, contact treatment, and interface roughness/phonons
  • atomistic dopants

 

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