2D finite element ensemble Monte Carlo device simulations

2D finite element ensemble Monte Carlo device simulations

2D finite element ensemble Monte Carlo device simulations have the following capabilities:

  • 2D device mesh using quadrilateral elements
  • Ensemble Monte Carlo engine with transport model for Si, strain Si, and III-V semiconductors
  • Scattering mechanisms:

Bulk related:

    • polar optical phonons
    • inter/intra-valley optical phonons
    • acoustic phonons
    • ionized and neutral impurities (screening models: Debye-Hückel, Thomas-Fermi, static, q-dependent)
    • alloy scattering

Dielectric-semiconductor interface related:

    • interface roughness
    • interface phonons
  • Fermi-Dirac (self-consistent) or Boltzmann statistics
  • Quantum corrections using a effective quantum potential
  • Finite element mesh adapted electric field calculations, charge assignment, contact treatment, and interface roughness/phonons

2D finite element ensemble Monte Carlo device simulations2D finite element